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You visit site of Reseach & Design Center, that was known as Special engineering and design department in the time of the former Soviet Union .
Reseach & Design Center is a design subsidiary of JSC INTEGRAL-INTEGRAL Holding Managing Company. The main activity fields of Reseach & Design Center are design of integrated circuits , semiconductor devices with mastering on production capascities of JSC INTEGRAL-INTEGRAL Holding Managing Company or production lines of foundry fab, and also development of fabrication processes for semiconductor production.


Today R&D projects
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MCU, DRIVERS, IC FOR PERIPHERAL DEVICES


R & D project Development of elemental base for matrix silicon multiplexers for photoreceiving devices.
R & D project Development of integrated circuits of high-voltage drivers of lines/columns for control devices by information screens on gas-plasma panels (an. PD16306, PD16337).
R & D project Development of integrated circuit of high-stable LED driver (an. HV9961).
R & D project LED driver with inbuilt MOSFET key (an. HV9967).
R & D project Development of integrated circuit of high-voltage LED driver with universal PWM - stabilizer.



POWER ELECTRONICS & ANALOG ICs


R & D project Development of integrated circuit of micropower CMOS operational amplifier with consumption current no more than 85 u(an. AD8541).
R & D project Development of integrated circuit of universal CMOS operational amplifier with consumption current no more than 0,6 m (an. AD8515).
R & D project Development of integrated circuit of wide-range CMOS operational amplifier with frequency of unity gain no less than 15 mHz (an. AD8615).
R & D project Development of integrated circuit of seven-discharge current driver under the Darlingtone scheme (an. ULN2003A, ULN2004A).
R & D project Development of integrated circuit of eight-discharge current driver (an. TD62783).
R & D project Development of integrated circuit of control by pulse supply sources (an. KA7500).



MEMORY ICs


R & D project Research and development of elemental base for nonvolatile memory with ferroelectric dielectric (FRAM) and development of integrated circuit FRAM memory device of capacity 64 (an. FM24C256-SE).
R & D project Development of CMOS SLIC SRAM with information capacity of 4 bit (512x8) under 0,18 um design rules.
R & D project Development of CMOS SLIC SRAM with information capacity of 4 bit (256x16) under 0,18 um design rules.
R & D project Development of CMOS SLIC SRAM with information capacity of 4 bit (128 x 32) under 0,18 um design rules.
R & D project Development of design and technology of formation of random-access memory (RAM) of capacity 1bit (an. Rad Hard SRAM HX6228).

 

INTERFACE & TELECIM ICs


R & D project Development of integrated circuit of parallel-to-series converter of 21-discharge code with three transmitters of LVDS standard.)
R & D project Development of integrated circuit of three-channel receiver of LVDS standard with series-parallel conversion in 21-discharge code.

 

ANOTHER ICs


R & D project Development of multiplier of frequency with reduced energy consumption for coupling of CMOS apparatus with high-speed channel (an. SN65LVDS150).
R & D project Development of parallel-to-series converter with transmitter of LVDS standard (an. SN65LVDS151).
R & D project Development of receiver of LVDS standard with series-parallel converter (an. SN65LVDS152).
R & D project Development of integrated circuit of CMOS of once electrically programmable ROM of capacity 1 Mbit (128x8), stable to SEIF (an. 16321).
R & D project Development of integrated circuits of CMOS SLIC SRAM by information capacity of 4bit with organization (256 x16) and (512bit ? 8) (an. CY7C1041D, an. ACTS512K8).
R & D project Development of integrated circuit of CMOS SLIC SRAM by information capacity of 4bit (128 x 32) (an. ACTS128K32).
R & D project Development of integrated circuit of CMOS SLIC SRAM by information capacity of 16 bit (512 x32) (an. ACTS512K32).
R & D project Development of integrated circuits of CMOS SLIC SRAM by information capacity of 8bit with organization (256bit x 32) and (512bitx16) (an. CY7C1051DV33).
R & D project Development and manufacturing of CCPD integrated assemblies (IC CCPD) for system of optical-electronic observation (SOEO).
R & D project Research and development of integrated circuit of multi-channel former of temporary intervals, stable to SEIF.
R & D project Development of LIC for identification of products of special purpose (an.. MF1 IC S50).
R & D project Development of integrated circuit of wide-range video multiplexer 4 x 1 (an. AD9300).
R & D project Development of integrated circuit of driver with programmable multiplex for segment LCD (an. HT1621).
R & D project Development of integrated circuit of voltage regulator of positive polarity with low residual voltage for supply sources. (an. AMS1117A).
R & D project Development of integrated circuit of programmable digital thermometer with EEPROM and serial interface (an. DS1620).
R & D project Development of integrated circuit of real time hours with two-conductor serial I2C interface and battery supply (an. DS1307).
R & D project Development of integrated circuit of small-scale, low-power operational amplifier with range of input and output voltage, equal to supply voltage stable to SEIF (an. LMC7101).
R & D project Development of integrated circuit of single inverter, stable to SEIF (an. 7S04).
R & D project Development of integrated circuit of thermal sensing element in metal-and-ceramic package (an. LM135Z).
R & D project Development of series of integrated circuits of voltage stabilizers for small-scale quartz oscillators (an. 71728S; 71730S; 71740SB; 71750SB).
R & D project Development of integrated circuit of autonomous CAN- controller, stable to impact SEIF (an. 2515).
R & D project Research and development of specialized series of once programmable logical schemes on 2  and 8  faucets, stable to SEIF (an. RH1020, RH1280).
R & D project Development of analog base matrix chip for creation of semicustom analog integrated circuits, stable to SEIF (an. USI6000).
R & D project Development of set of interface integrated circuits of transceivers of RS-485 standard with reduced up to 3V supply voltage and stable to SEIF impact (an.. MAX3485, MAX3486).
R & D project Development of integrated circuits of interface transceivers of Manchester code with reduced supply voltage 3.3 V and stable to SEIF impact (an. HI1573, HI1574).
R & D project Development of set of integrated circuits for supply control, stable to SEIF (an. MAX809, MAX810).
R & D project Development of integrated circuit of micropower voltage stabilizer (an. ADM663A).
R & D project Development of integrated circuit of low-noise double-range reference voltage source (an. AD780).
R & D project Development of integrated circuit of regulable voltage stabilizer of negative polarity (an. LM137).
R & D project Development of elemental base, design libraries and LIC of dual-port SRAM of capacity 256 (an. ID7007).
R & D project Development of elemental base, design libraries on SOI structures and RAM integrated circuit of capacity 256, stable to SEIF impact (an. HX6356).
R & D project Development of elemental base, design libraries and EEPROM integrated circuit of capacity 256 (an. 24256).
Development of integrated circuits of voltage stabilizers of negative polarity in the package, intended for surface mounting (an. MC79XX).
R & D project Development of RISC-microcontroller with FLASH- memory, stable to SEIF (an. 90S/LS2333).
R & D project Development of microcontroller with ADC, stable to SEIF impact (an. 188081).
R & D project Development of transistors with operation voltages up to 800 V and currents up to 80 . (an. IRF540N, STP5NA80; RFP50N06; IRF830).
R & D project Development of integrated circuits for space application.
R & D project Development of integrated circuit of ferroelectric energy-dependent memory of information capacity of 1bit with organization 1288.

 


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Reseach & Design Center 2014